In recent years, SiC MOSFET has been the most preferred power semiconductor device for medium voltage range due to its improved switching response and high temperature (HT) operation capabilities. This HT operation capability of SiC MOSFET increases its application in HT environments like motor drives, hybrid electrical vehicles and industrial drilling tools. Though SiC MOSFET has the capability to operate at a higher junction temperature (150°C to 200°C), it requires a robust gate drive and protection circuit for its reliable operation. Our work at PEMSES focuses on development of HT gate driver for SiC MOSFET. The proposed gate driver consists of an improved desaturation and under voltage lock out circuit.